MMBD6050 www.vishay.com vishay semiconductors rev. 1.6, 15-may-13 1 document number: 85735 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal switching diode mechanical data case: sot-23 weight: approx. 8.8 mg packaging codes/options: 18/10k per 13" reel (8 mm tape), 10k/box 08/3k per 7" reel (8 mm tape), 15k/box features ? silicon epitaxial planar diode ? fast switching diode in case sot-23, especially suited for automatic insertion. ? aec-q101 qualified ? base p/n-e3 - rohs-compliant, commercial grade ? base p/n-he3 - rohs-compliant, aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? ? ? ? ? notes (1) fr-5 = 1.0" x 0.75" x 0.062". (2) alumina = 0.4" x 0.3" x 0.024" 99.5 % alumina 12 3 parts table part ordering code internal co nstruction type marking remarks MMBD6050 MMBD6050-e3-08 or MMBD6050-e3-18 single diode 5am tape and reel MMBD6050-he3-08 or MMBD6050-he3-18 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit continuous re verse voltage v r 70 v forward current i f 200 ma peak forward surge current i fsm 500 ma maximum power dissipat ion on fr-5 board (1) p tot 225 mw derate above 25 c p tot 1.8 mw/c maximum power dissipation on alumina substrate (2) p tot 300 mw derate above 25 c p tot 2.4 mw/c thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance fr-5 r thja 556 c/w junction to ambient alumina r thja 417 c/w maximum junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c operating temperature range t op - 55 to + 150 c
MMBD6050 www.vishay.com vishay semiconductors rev. 1.6, 15-may-13 2 document number: 85735 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - dynamic forward resistance vs. forward current fig. 2 - admissible power dissipatio n vs. ambient temperature fig. 3 - dynamic forward resistance vs. forward current fig. 4 - relative capacitance vs. reverse voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit reverse breakdown voltage i r = 100 a v (br) 70 v forward voltage i f = 1 ma v f 0.55 0.7 v i f = 100 ma v f 0.85 1.1 v reverse leakage current v r = 50 v i r 100 na reverse recovery time i f = i r = 10 ma, i r = 1 ma t rr 4ns diode capacitance v r = 0 c d 2.5 pf r - dynamic for w ard resistance f () 10 100 1 1 100 10 18861 i f - for w ard c u rrent (ma) 200 18889 t am b -am b ient temperat u re ( c) 500 400 300 200 100 20 40 60 80 100 120 140 160 180 0 0 p - admissi b le po w er dissipation ( mw ) tot 18662 1 10 100 1000 10000 r - dynamic for w ard resistance f () 110 0.1 0.01 100 i f - for w ard c u rrent (ma) =25 c t j f=1khz 18664 2468 0 1.1 1.0 0.9 0.8 0.7 10 c d ( v r )/c d (0 v ) - relati v e capacitance (pf) v r - re v erse v oltage ( v ) =25 c t j f=1mhz
MMBD6050 www.vishay.com vishay semiconductors rev. 1.6, 15-may-13 3 document number: 85735 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - leakage current vs. junction temperature fig. 6 - admissible repetitive peak forw ard current vs. pulse duration 18665 1 10 100 1000 10000 0 20 40 60 80 100 120 140 160 180 200 i - leakage c u rrent ( na ) r t j -j u nction temperat u re ( c) =20 v v r 10 10 1 -1 100 10 1 0.1 /t t = 1/f =t pp i frm t p t t i =0 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 18666 i - admissi b le repetiti v e frm peak for w ard c u rrent ( a ) t p -p u lse length ( s )
MMBD6050 www.vishay.com vishay semiconductors rev. 1.6, 15-may-13 4 document number: 85735 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sot-23 foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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